BLF245 |
RFQ for BLF245 |
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| Product | Manufacturers | Pack | D/C |
| BLF245 | - | TO-59 | 02+ |
Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range.
The transistor is encapsulated in a 4-lead SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange.
Matched gate-source voltage (VGS) groups are available on request.
Features |
| · High power gain· Low noise figure· Easy power control· Good thermal stability· Withstands full load mismatch. |
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VDS | drain-source voltage | 65 | V | ||
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